PART |
Description |
Maker |
2SB1151-T60-T 2SB1151L-T60-T 2SB1412-TN3-F-R 2SB14 |
NPN SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS HIGH VOLTAGE HIGH SPEED SWITCHING BIPOLAR POWER GENERAL PURPOSE TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT
|
友顺科技股份有限公司 UTC[Unisonic Technologies]
|
2SK1365 E001341 K1365 |
FET, Silicon N Channel MOS Type(for High Speed, High Current Switching, Switching Power Supply) HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS SWITCHING POWER SUPPLY APPLICATIONS From old datasheet system FET/ Silicon N Channel MOS Type(for High Speed/ High Current Switching/ Switching Power Supply)
|
Toshiba Corporation Toshiba Semiconductor
|
HAT1038R HAT1038RJ HAT1038RD |
Power switching MOSFET Silicon P Channel Power MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
|
19007-0032 19005-0001 19005-0015 19007-0029 19007- |
.187X.020 FIQD FLAG EXP. TAPED (BB-2224X 2 mm2, PUSH-ON TERMINAL Female Disconnect Solderless Terminal; Wire Size (AWG):18-22; Tab Width:0.250"; Insulator Color:Pink; Terminal Insulation:Nylon; Gender:Female 0.8 mm2, PUSH-ON TERMINAL .250X.032 FEM.FIQD COUPLER TP (C-2265T) 5 mm2, PUSH-ON TERMINAL CONN .187 FLAG INSUL 14-16AWG 2 mm2, PUSH-ON TERMINAL .250X.032 FIQD FLAG STRIP(AA-2220Z) RoHS Compliant: Yes 0.8 mm2, PUSH-ON TERMINAL CONN .250 FLAG INSUL 18-22AWG 0.8 mm2, PUSH-ON TERMINAL .187X.020 FIQD FLAG (AA-2222) 0.8 mm2, PUSH-ON TERMINAL .187X.032 FIQD FLAG (BB-2225) 2 mm2, PUSH-ON TERMINAL CONN .250 MALE INSUL 14-16AWG 2 mm2, TAB TERMINAL 190070020
|
Molex, Inc. MOLEX INC
|
FS10UM-12 |
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE DC SWITCHING POWER SUPPLY PROGRAMMABLE 1-40VDC 0-5A
|
Mitsubishi Electric Corporation Powerex Power Semiconductors
|
2SJ529 2SJ529L 2SJ529S |
Power switching MOSFET Silicon P Channel MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
|
2SJ528 2SJ528L 2SJ528S |
Power switching MOSFET Silicon P Channel MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
|
GT25Q102 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications N CHANNEL IBGT (HIGH POWER SWITCHING APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
GT15Q101 E001909 |
Silicon N-Channel IGBT for High Power Switching Application(用于大功率转换的N沟道绝缘栅双极型晶体 N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) From old datasheet system N CHANNEL IGBT (HIGH POWER SWITCHING/ MOTOR CONTROL APPLICATIONS)
|
http:// Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
2SB1202L-X-T6C-K 2SB1202L-X-TM3-T 2SB1202L-R-TN3-K |
HIGH CURRENT SWITCHING APPLICATION 3 A, 50 V, PNP, Si, POWER TRANSISTOR, TO-252 HIGH CURRENT SWITCHING APPLICATION 大电流开关应 HIGH CURRENT SWITCHING APPLICATION 3 A, 50 V, PNP, Si, POWER TRANSISTOR, TO-126 HIGH CURRENT SWITCHING APPLICATION 3 A, 50 V, PNP, Si, POWER TRANSISTOR, TO-251
|
UTC[Unisonic Technologies] 友顺科技股份有限公司 Unisonic Technologies Co., Ltd. UNISONIC TECHNOLOGIES CO LTD ??『绉???′唤??????
|
FS70UMJ-2 |
Nch POWER MOSFET HIGH-SPEED SWITCHING USE 70 A, 100 V, 0.017 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
|
Powerex, Inc. POWEREX[Powerex Power Semiconductors] Mitsubishi Electric Corporation
|